USE OF SILICON HIGH-RESISTANCE STRAIN GAGES TO IMPROVE LONG-TERM STABILITY OF PRESSURE  SENSORS FOR MONITORING AND CONTROL SYSTEM

Barinov Ilya Nikolaevich, candidate of technical sciences, associate professor, sub-department of information
and measuring equipment, Penza State University, mzungu@inbox.ru
Volkov Vadim Sergeevich, candidate of technical sciences, associate professor, sub-department of instrument making, Penza State University, distorsion@rambler.ru
Evdokimov Sergey Pavlovich, applicant, Penza State University, mzungu@inbox.ru
Kudryavtseva Daria Alekandrovna, applicant, Penza State University, mzungu@inbox.ru

 621.3.032

The causes of pressure sensor elements long-term unstability are showed. The long-term unstability reduction methods are proposed. the design of a pressure sensor based on the use of high-resistivity silicon strain gauges is proposed. The results of simulation the temperature compensation circuit comprising a high resistance thermistor are analyzed.

high temperature pressure sensor, long-term stability, semiconductor defects, SOI-structure, high-resistance silicon.